Part Number Hot Search : 
AF100 HT95LXXX 3225K25 116004 015445 BAS21DW GP20B 015445
Product Description
Full Text Search
 

To Download MAX5924DEUB Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  general description the max5924/max5925/max5926 1v to 13.2v hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. these devices hot swap sup- plies ranging from 1v to 13.2v provided that the device supply voltage, v cc , is at or above 2.25v and the hot- swapped supply, v s , does not exceed v cc . the max5924/max5925/max5926 hot-swap controllers limit the inrush current to the load and provide a circuit- breaker function for overcurrent protection. the devices operate with or without a sense resistor. when operat- ing without a sense resistor, load-probing circuitry ensures a short circuit is not present during startup, then gradually turns on the external mosfet. after the load probing is complete, on-chip comparators provide overcurrent protection by monitoring the voltage drop across the external mosfet on-resistance. in the event of a fault condition, the load is disconnected. the max5924/max5925/max5926 include many inte- grated features that reduce component count and design time, including configurable turn-on voltage, slew rate, and circuit-breaker threshold. an on-board charge pump provides the gate drive for a low-cost, external n-channel mosfet. the max5924/max5925/max5926 are available with open-drain pgood and/or pgood outputs. the max5925/max5926 also feature a circuit breaker with temperature-compensated r ds(on) sensing. the max5926 features a selectable 0ppm/? or 3300ppm/? temperature coefficient. the max5924 temperature coef- ficient is 0ppm/? and the max5925 temperature coeffi- cient is 3300ppm/?. autoretry and latched fault- management configurations are available (see the selector guide ). applications base stations raid remote-access servers network routers and switches servers portable device bays features ? hot swap 1v to 13.2v with v cc 2.25v ? drive high-side n-channel mosfet ? operation with or without r sense ? temperature-compensated r ds(on) sensing ? protected during turn-on into shorted load ? adjustable circuit-breaker threshold ? programmable slew-rate control ? programmable turn-on voltage ? autoretry or latched fault management ? 10-pin ?ax ? or 16-pin qsop packages max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor ________________________________________________________________ maxim integrated products 1 n max5925 max5926 sc_det gnd v cc removable card 2.25v to 13.2v backplane cb sense gate gnd v s 1v to v cc v cc out r sc r cb v out see figure 1 for a detailed typical operating circuit without r sense . typical operation without r sense typical operating circuits ordering information 19-3443; rev 2; 10/06 for pricing, delivery, and ordering information, please contact maxim/dallas direct! at 1-888-629-4642, or visit maxim? website at www.maxim-ic.com. evaluation kit available selector guide appears at end of data sheet. pin configurations appear at end of data sheet. part temp range pin-package max5924 aeub -40? to +85? 10 ?ax max5924beub -40? to +85? 10 ?ax max5924ceub* -40? to +85? 10 ?ax MAX5924DEUB* -40? to +85? 10 ?ax max5925 aeub -40? to +85? 10 ?ax max5925beub* -40? to +85? 10 ?ax max5925ceub* -40? to +85? 10 ?ax max5925deub* -40? to +85? 10 ?ax max5926 eee -40? to +85? 16 qsop?p** typical operating circuits continued at end of data sheet. * future product?ontact factory for availability. ** ep = exposed pad. ?ax is a registered trademark of maxim integrated products, inc.
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor 2 _______________________________________________________________________________________ absolute maximum ratings electrical characteristics (v cc , en (max5924/max5925), en1 (max5926) = +2.25v to +13.2v; en2 (max5926) = 0v; v s (see figure 1) = +1.05v to v cc ; t a = -40? to +85?, unless otherwise noted. typical values are at v cc = 5v, r l = 500 ? from out to gnd, c l = 1?, slew = open, t a = +25?, unless otherwise noted.) (note 1) stresses beyond those listed under ?bsolute maximum ratings?may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specificatio ns is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. (all voltages referenced to gnd, unless otherwise noted). v cc .........................................................................-0.3v to +14v gate*.....................................................................-0.3v to +20v all other pins ............-0.3v to the lower of (v cc + 0.3v) or +14v sc_det current (200ms pulse width, 15% duty cycle) ...140ma continuous current (all other pins) .....................................20ma continuous power dissipation (t a = +70?) 10-pin ?ax (derate 6.9mw/? above +70?) ...........556mw 16-pin qsop (derate 18.9mw/? above +70?).......1509mw operating temperature range ...........................-40? to +85? junction temperature .....................................................+150? storage temperature range .............................-65? to +150? lead temperature (soldering, 10s) .................................+300? parameter symbol conditions min typ max units power supplies v cc operating range v cc 2.25 13.2 v v s operating range v s v s as defined in figure 1 1.05 v cc v supply current i cc fet is fully enhanced, sc_det = v cc 1.5 2.5 ma undervoltage lockout (uvlo) uvlo threshold v uvlo d efaul t val ue, v s and v c c i ncr easi ng , fi g ur e 1 1.73 2.06 2.47 v v cc uvlo deglitch time t dg (note 2) 900 ? v cc uvlo startup delay t d , uvlo 123 200 350 ms load-probe 2.25v < v cc < 5v 4 30 65 load-probe resistance (note 3) r lp 5v < v cc < 13.2v 3 10 20 ? load-probe timeout t lp 43 102 205 ms load-probe threshold voltage v lp,th (note 4) 172 200 235 mv circuit breaker i cb tc = high (max5926), max5924 34 37 42 v cc = 2.25v, t a = +25? 44 51 58 i cb25 tc = low (max5926), max5925 (note 5) 5v v cc 13.2v, t a = +25? 49 54 58 v cc = 2.25v, t a = +85? 47 52 60 circuit-breaker programming current i cb85 tc = low (max5926), max5925 (note 5) 5v v cc 13.2v, t a = +85? 58 63 70 ? * gate is internally driven and clamped. do not drive gate with external source.
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor _______________________________________________________________________________________ 3 electrical characteristics (continued) (v cc , en (max5924/max5925), en1 (max5926) = +2.25v to +13.2v; en2 (max5926) = 0v; v s (see figure 1) = +1.05v to v cc ; t a = -40? to +85?, unless otherwise noted. typical values are at v cc = 5v, r l = 500 ? from out to gnd, c l = 1?, slew = open, t a = +25?, unless otherwise noted.) (note 1) parameter symbol conditions min typ max units circuit-breaker programming current during startup i cb,su 2 x i cb ? circuit-breaker enable threshold v cb , en v gate - v out , rising gate voltage (note 6) 2.3 3.6 4.65 v circuit-breaker comparator offset voltage v cb_os 0.3 ?.7 mv fast circuit-breaker offset resistor r cbf figure 3 1.2 1.9 2.7 k ? slow circuit-breaker delay t cbs v cb - v sense = 10mv 0.95 1.6 2.95 ms fast circuit-breaker delay t cbf v cb - v sense = 500mv 280 ns circuit-breaker trip gate pulldown current i gate , pd v gate = 2.5v, v cc = 13.2v 13.5 27 ma max5924, tc = high (max5926) 0 circuit-breaker temperature coefficient tc icb max5925, tc = low (max5926) 3300 ppm/? out current i out 120 ? mosfet driver external gate drive v gs v gate - v out 2.25v v cc 13.2v 3.0 4.91 6.70 v slew = open, c gate = 10nf 2.19 9.5 load voltage slew rate sr c slew = 300nf, c gate = 10nf (note 8) 0.84 v/ms gate pullup current capacity i gate v gate = 0v 239 ? enable comparator en, en1 reference threshold v en/uvlo v en (max5924/max5925) or v en1 (max5926) rising 0.747 0.795 0.850 v en, en1 hysteresis v en , hys 30 mv en, en1 input bias current i en en (max5924/max5925) = v cc , en1 (max5926) = v cc ? ?0 na digital outputs (pgood, pgood ) power-good output low voltage v ol i ol = 1ma 0.3 0.4 v power-good output open-drain leakage current i oh pgood/ pgood = 13.2v 0.2 1 a power-good trip point v thpgood v gate - v out , rising gate voltage v cb _ en 3.6 4.7 v power-good hysteresis v pg , hys 0.36 v
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor 4 _______________________________________________________________________________________ typical operating characteristics (v cc = 5v, c l = 1?, c slew = 330nf, c gate = 10nf, r l = 500 ? , figure 1, t a = +25?, unless otherwise noted.) max5926 supply current vs. supply voltage max5924 toc01 v cc (v) i cc (ma) 12 10 8 6 4 0.4 0.8 1.2 1.6 2.0 0 214 v cc = v s enabled disabled max5926 supply current vs. temperature temperature ( c) i cc (ma) max5924 toc02 -40 -15 10 35 60 85 0 0.4 0.8 1.2 1.6 2.0 2.4 v cc = 13.2v v cc = v s v cc = 5.0v v cc = 3.0v v cc = 2.25v gate-drive voltage vs. supply voltage max5924 toc03 v cc (v) v gate - v s (v) 12 10 8 6 4 3 4 5 6 7 2 214 v s = 1v v s = 3v v s = 5v v s = v cc electrical characteristics (continued) (v cc , en (max5924/max5925), en1 (max5926) = +2.25v to +13.2v; en2 (max5926) = 0v; v s (see figure 1) = +1.05v to v cc ; t a = -40? to +85?, unless otherwise noted. typical values are at v cc = 5v, r l = 500 ? from out to gnd, c l = 1?, slew = open, t a = +25?, unless otherwise noted.) (note 1) note 1: all devices are 100% tested at t a = +25? and +85?. all temperature limits at -40? are guaranteed by design. note 2: v cc drops 30% below the undervoltage lockout voltage during t dg are ignored. note 3: r lp is the resistance measured between v cc and sc_det during the load-probing phase, t lp . note 4: tested at +25? & +85?. guaranteed by design at -40?. note 5: the circuit-breaker programming current increases linearly from v cc = 2.25v to 5v. see the circuit-breaker current vs. supply voltage graph in the typical operating characteristics . note 6: see the startup mode section for more information. note 7: v gate is clamped to 17v (typ) above ground. note 8: dv/dt = 330 x 10 -9 /c slew (v/ms), nmos device used for measurement was irf9530n. slew rate is measured at the load. parameter symbol conditions min typ max units logic and timing (tc, latch (max5926), en2 (max5926) autoretry delay t retry autoretry mode 0.6 1.6 3.3 s v ih 2.0 input voltage v il 0.4 v input bias current i bias logic high at 13.2v 3 a time to clear a latched fault t clr max5924a/ max5924b max5925a/ max5925b max5926 in latched mode 200 ?
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor _______________________________________________________________________________________ 5 slew rate vs. c slew max5924 toc09 c slew (nf) slew rate (v/ms) 1500 1000 500 1 10 100 0.1 0 2000 typical operating characteristics (continued) (v cc = 5v, c l = 1?, c slew = 330nf, c gate = 10nf, r l = 500 ? , figure 1, t a = +25?, unless otherwise noted.) gate drive voltage vs. temperature temperature ( c) v gs (v) max5924 toc04 -40 -15 10 35 60 85 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v cc = 13.2v v cc = 5.0v v cc = 3.0v v cc = v s circuit-breaker current vs. hot-swap voltage max5924 toc05 v s (v) cb ( ) 12 10 8 6 4 2 40 44 48 52 56 36 014 v cc = 13.2v tc = 3300ppm/ c tc = 0ppm/ c circuit-breaker current vs. supply voltage (tc = 3300ppm/ c) max5924 toc06 v cc (v) i cb ( a) 12 10 8 6 4 49 51 53 55 47 214 v cc = v s circuit-breaker current vs. supply voltage (tc = 0ppm/ c) max5924 toc07 v cc (v) i cb ( a) 12 10 8 6 4 214 v cc = v s 38.4 38.6 38.8 39.0 39.2 39.4 38.2 circuit-breaker programming current vs. temperature max5924 toc08 temperature ( c) i cb ( a) 60 35 10 -15 30 40 50 60 70 80 20 -40 85 v cc = v s = 5v tc = 3300ppm/ c tc = 0ppm/ c
short-circuit circuit-breaker event max5924 toc14 out gate i fet 5v/div 5v/div 5v/div 2 s/div 0v 0v 0v 1a/div 0a pgood autoretry delay max5924 toc15 out sc_det en1 5v/div 100mv/div 5v/div 400ms/div 0v 0v 0v t retry t d,uvlo max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor 6 _______________________________________________________________________________________ typical operating characteristics (continued) (v cc = 5v, c l = 1?, c slew = 330nf, c gate = 10nf, r l = 500 ? , figure 1, t a = +25?, unless otherwise noted.) turn-on waveform (c slew = 330nf) max5924 toc11 pgood out gate 5v/div 5v/div 5v/div 2ms/div 0v 0v 0v turn-on waveform (c slew = open) max5924 toc10 pgood out gate 5v/div 5v/div 5v/div 200 s/div 0v 0v 0v turn-off waveform max5924 toc12 pgood gate en1 5v/div 5v/div 5v/div 2 s/div 0v 0v 0v overcurrent circuit-breaker event max5924 toc13 out gate i fet 10v/div 5v/div 10v/div 400 s/div 0v 0v 0v t cbs 1a/div 0a pgood
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor _______________________________________________________________________________________ 7 overcurrent fault and autoretry delay max5924 toc16 out sc_det en1 5v/div 200mv/div 5v/div 400ms/div 0v 0v 0v gate 5v/div 0v uvlo delay and load probing max5924 toc17 out sc_det en1 5v/div 100mv/div 5v/div 40ms/div 0v 0v 0v t lp t d,uvlo uvlo response max5924 toc18 v cc gate 2v/div 1v/div 200 s/div 0v 0v >t dg uvlo deglitch response max5924 toc19 v cc gate 2v/div 1v/div 200 s/div 0v 0v max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor 8 _______________________________________________________________________________________ pin description pin max5924a/ max5924c/ max5925a/ max5925c max5924b/ max5924d/ max5925b/ max5925d max5926 name function 111v cc power-supply input. connect v cc to a voltage between 2.47v and 13.2v. v cc must always be equal to or greater than v s (see figure 1). 222 sc_det short-circuit detection output. connect sc_det to v out through a series resistor, r sc , when not using r sense . sc_det forces current (limited to 200ma) into the external load through r sc at startup to determine whether there is a short circuit (load probing). connect sc_det directly to v cc when using r sense , do not connect sc_det to v cc when not using r sense in an attempt to disable load probing. 33en on/off control input. drive en high to enable the device. drive en low to disable the device. an optional external resistive-divider connected between v cc , en, and gnd sets the programmable turn-on voltage. 44 pgood open-drain active-low power-good output ?7 pgood open-drain active-high power-good output 5 5 5 gnd ground 6612 slew slew-rate adjustment input. connect an external capacitor between slew and gnd to adjust the gate slew rate. leave slew unconnected for the default slew rate. 7713 gate gate-drive output. connect gate to the gate of the external n-channel mosfet. 8 8 14 out output voltage. connect out to the source of the external mosfet. 9915 sense circuit-breaker sense input. connect sense to out when not using an external r sense (figure 1). connect sense to the drain of the external mosfet when using an external r sense (figure 2). 10 10 16 cb circuit-breaker threshold programming input. connect an external resistor, r cb , from cb to v s to set the circuit-breaker threshold voltage. 3 en1 active-high on/off control input. drive en1 high to enable the device when en2 is low. drive en1 low to disable the device, regardless of the state of en2 . an optional external resistive-divider between v cc , en1, and gnd sets the programmable turn-on voltage while en2 is low. 6 en2 active-low on/off control input. drive en2 low to enable the device when en1 is high. drive en2 high to disable the device, regardless of the state of en1. 8 latch latch mode input. drive latch low for autoretry mode. drive latch high for latched mode. 9tc circuit-breaker temperature coefficient selection input. drive tc low to select a 3300ppm/? temperature coefficient. drive tc high to select a 0ppm/? temperature coefficient. 10, 11 n.c. no connection. not internally connected. ep ep exposed pad. connect ep to gnd.
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor _______________________________________________________________________________________ 9 figure 1. typical operating circuit (without r sense ) figure 2. typical operating circuit (with r sense ) max5925 max5926 sc_det pgood** slew pgood (pgood*) en v cc removable card 2.25v to 13.2v backplane cb tc** latch** sense gate en (en1**) v s 1v to v cc v cc c l c slew out gnd r sc r cb *max5925a and max5925c. **max5926. gnd gnd v+ en2 en2** on (on*) dc-dc converter 20k ? 10 ? 1 f max5924 max5926 sc_det pgood** slew pgood (pgood*) en v cc removable card 2.25v to 13.2v backplane cb latch** tc** sense gate en (en1**) v s 1v to v cc v cc c l c slew out gnd r cb *max5924a and max5924c. **max5926. gnd gnd dc-dc converter v+ en2 en2** on (on*) 20k ? r sense v cc 10 ? 10 ? 1 f
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor 10 ______________________________________________________________________________________ logic control oscillator timer v s v z = 9v n charge pump en/(en1***) cb slew v cc gate v cc v cc v cc v cc pgood** out sc_det gnd 0.8v 1.24v en2*** sense latch*** pgood* 0.2v *max5924b, max5924d, max5925b, max5925d, max5926 only. **max5924a, max5924c, max5925a, max5925c, max5926 only. ***max5926 only. tc*** slow comparator fast comparator r lp r cbf v cb,th v cbf,th i cb max5924 max5925 max5926 n 2 a a 75k ? 75k ? 50k ? figure 3. functional diagram
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor ______________________________________________________________________________________ 11 detailed description the max5924/max5925/max5926 are hot-swap con- troller ics designed for applications where a line card is inserted into a live backplane. normally, when a line card is plugged into a live backplane, the card? discharged filter capacitors provide a low impedance that can momentarily cause the main power supply to collapse. the max5924/max5925/max5926 are designed to reside either in the backplane or in the removable card to provide inrush current limiting and short-circuit pro- tection. this is achieved using an external n-channel mosfet and an optional external current-sense resistor. several critical parameters can be configured: ? slew rate (inrush current) ? circuit-breaker threshold ? turn-on voltage ? fault-management mode (max5926) ? circuit-breaker temperature coefficient (max5926) see the selector guide for a device-specific list of fac- tory-preset features and parameters. startup mode it is important that both v cc and v s rise at a minimum rate of 100mv/ms during the critical time when power voltages are below those values required for proper logic control of internal circuitry. this applies for 0.5v v cc 2.5v and 0.5v v s 0.8v. this is particularly true when latch is tied high. the max5924/max5925/max5926 control an external mosfet placed in the positive power-supply pathway. when power is first applied, the max5924/max5925/ max5926 hold the mosfet off indefinitely if the supply voltage is below the undervoltage lockout level or if the device is disabled (see the en (max5924/max5925), en1/ en2 (max5926) section). if neither of these condi- tions exist, the device enters a uvlo startup delay period for 200ms. next, the max5924/max5925/ max5926 detect whether an external sense resistor is present; and then autoconfigure accordingly (see figure 4). if no sense resistor is present, bilevel fault protection is disabled and load-probing circuitry is enabled (see the load probing section). if load probing is not successful, the fault is man- aged according to the selected fault management mode (see the latched and auto-retry fault management section). if load probing (see the load probing section) is suc- cessful, slew-rate limiting is employed to gradually turn on the mosfet. if the device detects an external r sense , circuit- breaker threshold is set at 2xi cb , the slow compara- tor is disabled, the startup phase begins without delay for load probing, and slew-rate limiting is employed to gradually turn on the mosfet. during the startup phase, the voltage at the load, v out , rises at a rate determined by the selected slew rate (see the slew rate section). the inrush current, i inrush , to the load is limited to a level proportional to the load capacitance, c l , and the slew rate: where sr is the slew rate in v/ms and c l is load capac- itance in ?. for operation with and without r sense , once v gate - v out exceeds v cb,en , pgood and/or pgood assert. when v gate - v out = v cb,en , the max5924/ max5925/max5926 enable standard bilevel fault pro- tection with normal i cb (see the bilevel fault protection section). i csr inrush l = 1000 v cc rises above v uvlo enable true? uvlo 200ms delay v gs v thpgood fault management disable fault protection, enable load probe slew-rate-limited startup r sense present? v gs v cb,en no no no pgood yes no yes yes yes load probe successful? enable standard bilevel fault protection begin normal operation i cb,su = 2 x i cb disable slow comparator figure 4. startup flow chart
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor 12 ______________________________________________________________________________________ load probing the max5924/max5925/max5926 load-probing circuit- ry detects short-circuit conditions during startup. load probing is active only when no external r sense is detected. as the device begins load probing, sc_det is connected to v cc through an internal switch with an on-resistance of r lp (figure 6). v cc then charges the load with a probe current limited at 200ma. i probe = (v cc - v out )/(r lp + r sc ) (figure 1) if the load voltage does not reach v lp,th (0.2v typ) within t lp , a short-circuit fault is detected and the start- up mode is terminated according to the selected fault- management mode (see the fault management section and figure 5). if no fault condition is present, pgood/ pgood asserts at the end of the startup peri- od (see the turn-on waveforms in the typical operating characteristics ). load probing can only be, and must be, employed when not using an external r sense . normal operation in normal operation, after startup is complete, protec- tion is provided by turning off the external mosfet when a fault condition is encountered. dual-speed/ bilevel fault protection incorporates two comparators with different thresholds and response times to monitor the current: 1) slow comparator. this comparator has a 1.6ms (typ) response time. the slow comparator ignores low-amplitude momentary current glitches. after an extended overcurrent condition, a fault is acknowl- edged and the mosfet gate is discharged. 2) fast comparator. this comparator has a quick response time and a higher threshold voltage. the fast comparator turns off the mosfet immediately when it detects a large high-current event such as a short circuit. in each case, when a fault is encountered, the power- good output deasserts and the device drives gate low. after a fault, the max5924a, max5924b, max5925a, and max5925b latch gate low and the max5924c, max5924d, max5925c, and max5925d enter the autoretry mode. the max5926 has selectable latched or autoretry modes. figure 7 shows the slow comparator response to an overcurrent fault. v cc (v) r lp ( ? ) 12 10 8 6 4 6 8 10 12 14 4 214 v cc = v s figure 6. load-probe resistance vs. supply voltage v gate pgood* v out i load i lim 3.0v to 6.7v pgood** *max5924b, max5924d, max5925b, max5925d, and max5926 only. **max5924a, max5924c, max5925a, max5925c, and max5926 only. t cbs v thpgood figure 7. slow comparator response to an overcurrent fault t probe < t lp i inrush c l = large c l = small v out v out i load i load i probe v lp,th (0.2v typ) sr = dv dt c l = small sr = dv dt figure 5. startup waveform
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor ______________________________________________________________________________________ 13 bilevel fault protection bilevel fault protection in startup mode bilevel fault protection is disabled in startup mode, and is enabled when v gate-vout exceeds v cb,en at the end of the startup period. when no r sense is detected, neither slow nor fast com- parator is active during startup because the high rd(on) of the mosfet when not fully enhanced would signal an artificially-high v in -v sense voltage. load prob- ing prior to startup insures that the output is not short cir- cuited. when r sense is detected, the slow comparator is dis- abled during startup while the fast comparator remains active. the overcurrent trip level is higher than normal during the startup period because the icb is temporarily doubled to icb,su at this time. this allows higher than normal startup current to allow for output capacitor charging current. slow comparator the slow comparator is disabled during startup while the external mosfet turns on. if the slow comparator detects an overload condition while in normal operation (after startup is complete), it turns off the external mosfet by discharging the gate capaci- tance with i gate,pd . the magnitude of i gate,pd depends on the external mosfet gate-to-source volt- age, v gs . the discharge current is strongest immedi- ately following a fault and decreases as the mosfet gate is discharged (figure 8a). fast comparator the fast comparator is used for serious current overloads or short circuits. if the load current reaches the fast com- parator threshold, the device quickly forces the mosfet off. the fast comparator has a response time of 280ns, and discharges gate with i gate,pd (figure 8a). the fast comparator is disabled during startup when no r sense is detected latched and autoretry fault management the max5924a, max5924b, max5925a, and max5925b latch the external mosfet off when an overcurrent fault is detected. following an overcurrent fault, the max5924c, max5924d, max5925c, and max5925d enter autoretry mode. the max5926 can be configured for either latched or autoretry mode (see table 1). in autoretry, a fault turns the external mosfet off then automatically restarts the device after the autoretry delay, t retry . during the autoretry delay, pull en or en1 low to restart the device. in latched mode, pull en or en1 low for at least 100? to clear a latched fault and restart the device. power-good outputs the power-good output(s) are open-drain output(s) that deassert: ? when v cc < v uvlo ? during t d,uvlo ? when v gs < v thpgood ? during load probing ? when disabled (en = gnd (max5924/max5925), en1 = gnd or en2 = high (max5926)) ? during fault management ? during t retry or when latched off (max5924a, max5924b, max5925a, max5925b, or max5926 (latch = low)). pgood/ pgood asserts only if the part is in normal mode and no faults are present. v gs (v) i gate, pd (ma) 56 2 34 1 10 20 30 40 50 60 0 07 v cc = 13.2v figure 8a. gate discharge current vs. mosfet gate-to-source voltage table 1. selecting fault management mode (max5926) latch fault management low autoretry mode high latched mode
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor 14 ______________________________________________________________________________________ undervoltage lockout (uvlo) uvlo circuitry prevents the max5924/max5925/ max5926 from turning on the external mosfet until v cc exceeds the uvlo threshold, v uvlo , for t d,uvlo . uvlo protects the external mosfet from insufficient gate-drive voltage, and t d,uvlo ensures that the board is fully plugged into the backplane and v cc is stable prior to powering the hot-swapped system. any input voltage transient at v cc below the uvlo threshold for more than the uvlo deglitch period, t dg , resets the device and ini- tiates a startup sequence. device operation is protected from momentary input-voltage steps extending below the uvlo threshold for a deglitch period, t dg. however, the power-good output(s) may momentarily deassert if the magnitude of a negative step in v cc exceeds approxi- mately 0.5v, and v cc drops below v uvlo . operation is unaffected and the power-good output(s) assert(s) within 200? as shown in figure 8b. this figure also shows that if the uvlo condition exceeds t dg = 900? (typ), the power-good output(s) again deassert(s) and the load is disconnected. determining inrush current determining a circuit? inrush current is necessary to choose a proper mosfet. the max5924/max5925/ max5926 regulate the inrush current by controlling the output-voltage slew rate, but inrush current is also a function of load capacitance. determine an anticipated inrush current using the following equation: where c l is the load capacitance in ? and sr is the selected max5924/max5925/max5926 output slew rate in v/ms. for example, assuming a load capacitance of 100? and using the value of sr = 10v/ms, the anticipat- ed inrush current is 1a. if a 16v/ms output slew rate is used, the inrush current increases to 1.6a. choose sr so the maximum anticipated inrush current does not trip the fast circuit-breaker comparator during startup. slew rate the max5924/max5925/max5926 limit the slew rate of v out . connect an external capacitor, c slew , between slew and gnd to adjust the slew-rate limit. floating slew sets the maximum slew rate to the minimum value. calculate c slew using the following equation: c slew = 330 ? 10 -9 / sr where, sr is the desired slew rate in v/ms and c slew is in nf. this equation is valid for c slew 100nf. for higher sr, see the typical operating characteristics . a 2? (typ) pullup current clamped to 1.4v causes an initial jump in the gate voltage, v gate , if c gate is small and the slew rate is slow (figure 3). figure 9 illustrates how the addition of gate capacitance minimizes this ini- tial jump. c gate should not exceed 25nf. iac dv dt csr inrush l out l () = = 1000 5v/div v gate 0v 0v v s = v cc = 13.2v c slew = 1 f c l = 10 f 10ms/div mosfet only mosfet and c gate = 20nf figure 9. impact of c gate on the v gate waveform 2v/div 1v/div 1v/div 200 s/div gate pgood v cc figure 8b. pgood behavior with large negative input-voltage step when v s is near v s(min)
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor ______________________________________________________________________________________ 15 en (max5924/max5925), en1/ en2 (max5926) the enable comparators control the on/off function of the max5924/max5925/max5926. enable is also used to reset the fault latch in latch mode. pull en or en1 low for 100? to reset the latch. a resistive divider between en or en1, v s , and gnd sets the programmable turn- on voltage to a voltage greater than v uvlo (figure 10). selecting a circuit-breaker threshold the max5924/max5925/max5926 offer a circuit-break- er function to protect the external mosfet and the load from the potentially damaging effects of excessive cur- rent. as load current flows through r ds(on) (figure 12) or r sense (figure 13), a voltage drop is generated. after v gs exceeds v cb,en , the max5924/max5925/ max5926 monitor this voltage to detect overcurrent conditions. if this voltage exceeds the circuit-breaker threshold, the external mosfet turns off and the power-good output(s) deassert(s). to accommodate different mosfets, sense resistors, and load currents, the max5924/max5925/max5926 voltage across r cb can be set between 10mv and 500mv. the value of the circuit-breaker voltage must be carefully selected based on v s (figure 11). no r sense mode when operating without r sense , calculate the circuit- breaker threshold using the mosfet? r ds(on) at the worst possible operating condition, and add a 20% over- current margin to the maximum circuit current. for exam- ple, if a mosfet has an r ds(on) of 0.06 ? at t a = +25?, and a normalized on-resistance factor of 1.75 at t a = +105?, the r ds(on) used for calculation is the product of these two numbers, or (0.06 ? ) x (1.75) = 0.105 ? . then, if the maximum current is expected to be 2a, using a 20% margin, the current for calculation is (2a) x (1.2) = 2.4a. the resulting minimum circuit-break- er threshold is then a product of these two numbers, or (0.105 ? ) x (2.4a) = 0.252v. using this method to choose a circuit-breaker threshold allows the circuit to operate under worst-case conditions without causing a circuit- breaker fault, but the circuit-breaker function will still detect a short circuit or a gross overcurrent condition. figure 11. maximum circuit-breaker programming resistor vs. temperature temperature ( c) r cb(max) ( ? ) 60 35 10 -15 3000 6000 9000 12,000 15,000 0 -40 85 v s = 1.5v v s = 1.4v v s = 1.3v v s = 1.2v v s = 1.1v v s = 1.0v tc = 0ppm/ c temperature ( c) r cb(max) ( ? ) 60 35 10 -15 3000 6000 9000 12,000 15,000 0 -40 85 v s = 1.5v v s = 1.4v v s = 1.3v v s = 1.2v v s = 1.1v v s = 1.0v tc = 3300ppm/ c en (en1) cb sense gate v s max5924_ max5925_ max5926 r 1 r 2 (r 2 + r 1 ) v en/uvlo r 2 ( ) are for max5926 only. out sc_det (en2) v cc gnd r cb v s,turn-on = r sc figure 10. adjustable turn-on voltage
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor 16 ______________________________________________________________________________________ to determine the proper circuit-breaker resistor value use the following equation, which refers to figure 12: where i tripslow is the desired slow-comparator trip current. the fast-comparator trip current is determined by the selected r cb value and cannot be adjusted indepen- dently. the fast-comparator trip current is given by: sc_det must be connected to out through the select- ed r sc when not using r sense . r sense mode when operating with r sense , calculate the circuit- breaker threshold using the worst possible operating conditions, and add a 20% overcurrent margin to the maximum circuit current. for example, with a maximum expected current of 2a, using a 20% margin, the cur- rent for calculation is (2a) x (1.2) = 2.4a. the resulting minimum circuit-breaker threshold is then a product of this current and r sense = 0.06 ? , or (0.06 ? ) x (2.4a) = 0.144v. using this method to choose a false circuit- breaker threshold allows the circuit to operate under worst-case conditions without causing a circuit-breaker fault, but the circuit-breaker function will still detect a short-circuit or a gross overcurrent condition. to determine the proper circuit-breaker resistor value, use the following equation, which refers to figure 13: where, i tripslow is the desired slow-comparator trip current. the fast-comparator trip current is determined by the selected r cb value and cannot be adjusted indepen- dently. the fast-comparator trip current is given by: sc_det should be connected to v cc when using r sense . i ixr r v r tripfast cb cbf cb cb os sense = + () , r ixrv i cb tripslow sense cb os cb = () + , i ixr r v r tripfast cb cbf cb cb os ds on t = + () , () () r ixr v i cb tripslow ds on t cb os cb = () + () () , tc select i cb max5925 max5926 sense gate v s r cb i load r cbf r sense v out out cb slow comparator v cb,th v cb,os fast comparator v cbf,th v cb,os figure 13. circuit breaker using r sense tc select slow comparator v cb,th i cb max5925 max5926 cb sense gate v s r cb i load r cbf r ds(on) v cb,os v out out fast comparator v cbf,th v cb,os figure 12. circuit breaker using r ds(on)
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor ______________________________________________________________________________________ 17 circuit-breaker temperature coefficient in applications where the external mosfet? on-resis- tance is used as a sense resistor to determine overcur- rent conditions, a 3300ppm/? temperature coefficient is desirable to compensate for the r ds(on) tempera- ture coefficient. use the max5926? tc input to select the circuit-breaker programming current? temperature coefficient, tc icb (see table 2). the max5924 temper- ature coefficient is preset to 0ppm/?, and the max5925? is preset to 3300ppm/?. setting tc icb to 3300ppm/c allows the circuit-breaker threshold to track and compensate for the increase in the mosfet? r ds(on) with increasing temperature. most mosfets have a temperature coefficient within a 3000ppm/c to 7000ppm/c range. refer to the mosfet data sheet for a device-specific temperature coefficent. r ds(on) and i cb are temperature dependent, and can therefore be expressed as functions of temperature. at a given temperature, the max5925/max5926 indicate an overcurrent condition when: i tripslow x r ds(on) (t) i cb (t) x r cb + | v cb, os | where v cb,os is the worst-case offset voltage. figure 14 graphically portrays operating conditions for a mosfet with a 4500ppm/? temperature coefficient. applications information component selection n-channel mosfet most circuit component values may be calculated with the aid of the max5924?ax5926. the "design calcula- tor for choosing component values" software can be downloaded from the max5924?ax5926 quickview on the maxim website. select the external n-channel mosfet according to the application? current and voltage level. table 3 lists some recommended components. choose the mosfet? on-resistance, r ds(on) , low enough to have a minimum voltage drop at full load to limit the mosfet power dis- sipation. high r ds(on) can cause undesired power loss and output ripple if the board has pulsing loads or triggers an external undervoltage reset monitor at full load. determine the device power-rating requirement to accommodate a short circuit on the board at startup with the device configured in autoretry mode . using the max5924/max5925/max5926 in latched mode allows the consideration of mosfets with higher r ds(on) and lower power ratings. a mosfet can typically with- stand single-shot pulses with higher dissipation than the specified package rating. low mosfet gate capaci- tance is not necessary since the inrush current limiting is achieved by limiting the gate dv/dt. table 4 lists some recommended manufacturers and components. be sure to select a mosfet with an appropriate gate drive (see the typical operating characteristics ). typically, for v cc less than 3v, select a 2.5v v gs mosfet. table 2. programming the temperature coefficient (max5926) tc tc icb (ppm/?) high 0 low 3300 table 3. suggested external mosfets application current (a) part description 1 international rectifier irf7401 so-8 2 siliconix si4378dy so-8 5 siliconix sud40n02-06 dpak 10 siliconix sub85n02-03 d2pak temperature ( c) v cb and v sense (mv) 85 60 35 10 -15 25 30 35 40 45 50 20 -40 110 v s = v cc = 13.2v, r cb = 672 ?, i tripslow = 5a, r ds(on) (25) = 6.5m ? circuit-breaker trip region (v sense v cb ) v cb = i cb (t) x r cb + v cb,os (3300ppm/ c) v sense = r ds(on) (t) x i load(max) (4500ppm/ c) figure 14. circuit-breaker trip point and current-sense voltage vs. temperature
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor 18 ______________________________________________________________________________________ optional sense resistor select the sense resistor in conjunction with r cb to set the slow and fast circuit-breaker thresholds (see the selecting a circuit-breaker threshold section). the sense-resistor power dissipation depends on the device configuration. if latched mode is selected, p rsense = (i overload ) 2 x r sense ; if autoretry is selected, then p rsense = (i overload ) 2 x r sense x (t on /t retry ). choose a sense-resistor power rating of twice the p rsense for long-term reliable operation. in addition, ensure that the sense resistor has an adequate i 2 t rating to survive instantaneous short-circuit conditions. no-load operation the internal circuitry is capable of sourcing a current at the out terminal of up to 120? from a voltage v in + v gs . if there is no load on the circuit, the output capacitor will charge to a voltage above v in until the external mos- fet? body diode conducts to clamp the capacitor volt- age at vin plus the body-diode v f . when testing or operating with no load, it is therefore recommended that the output capacitor be paralleled with a resistor of value: r = v x / 120? where v x is the maximum acceptable output voltage prior to hot-swap completion. design procedure given: ? v cc = v s = 5v ? c l = 150? ? full-load current = 5a ? no r sense ? i inrush = 500ma procedures: 1) calculate the required slew rate and corresponding c slew : 2) select a mosfet and determine the worst-case power dissipation. 3) minimize power dissipation at full load current and at high temperature by selecting a mosfet with an appropriate r ds(on) . assume a 20? temperature difference between the max5924/max5925/ max5926 and the mosfet. for example, at room temperature the irf7822? r ds(on) = 6.5m ? . the temperature coefficient for this device is 4000ppm/?. the maximum r ds(on) for the mosfet at t j(mosfet) = +105? is: the power dissipation in the mosfet at full load is: 4) select r cb . since the mosfet? temperature coefficient is 4000ppm/?, which is greater than tc icb (3300ppm/?), calculate the circuit-breaker thresh- old at high temperature so the circuit breaker is guaranteed not to trip at lower temperature during normal operation (figure 15). i tripslow = i full load + 20% = 5a + 20% = 6a r ds(on)105 = 8.58m ? (max), from step 2 i cb85 = 58? x (1 + (3300ppm/? x (85 - 25)?) = 69.5? (min) r cb = ((6a x 8.58m ? ) + 4.7mv)/ 69.5a = 808 ? r ixr v i cb tripslow ds on cb os cb = () + () , 105 85 pir a m mw d == ?= 22 5 8 58 215 () . rmcc ppm c m ds on () . ( ) . 105 6 5 1 105 25 4000 858 =+? ? ? ? ? ? ? =? ? c sr f slew v ms = = = ?? 330 10 330 10 33 01 99 . . sr i c v ms inrush l = = 1000 33 . table 4. component manufacturers component manufacturer phone website dale-vishay 402-564-3131 www.vishay.com sense resistors irc 828-264-8861 www.irctt.com fairchild 888-522-5372 www.fairchildsemi.com mosfets international rectifier 310-233-3331 www.irf.com
layout considerations keep all traces as short as possible and maximize the high-current trace dimensions to reduce the effect of undesirable parasitic inductance. place the max5924/ max5925/max5926 close to the card? connector. use a ground plane to minimize impedance and induc- tance. minimize the current-sense resistor trace length (<10mm), and ensure accurate current sensing with kelvin connections. when the output is short circuited, the voltage drop across the external mosfet becomes large. hence, the power dissipation across the switch increases, as does the die temperature. an efficient way to achieve good power dissipation on a surface-mount package is to lay out two copper pads directly under the mosfet pack- age on both sides of the board. connect the two pads to the ground plane through vias, and use enlarged copper mounting pads on the top side of the board. it is important to maximize the thermal coupling between the mosfet and the max5925/max5926 to balance the device junction temperatures. when the temperatures of the two devices are equal, the circuit-breaker trip threshold is most accurate. keep the mosfet and the max5925/max5926 as close to each other as possible to facilitate thermal coupling. max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor ______________________________________________________________________________________ 19 sense resistor high-current path max5924 max5925 max5926 r cb figure 15. kelvin connection for the current-sense resistor selector guide power-good output part circuit-breaker tempco (ppm/?) fault management pgood (open-drain) pgood (open-drain) max5924a 0 latched ? max5924b 0 latched ? max5924c 0 autoretry ? max5924d 0 autoretry ? max5925a 3300 latched ? max5925b 3300 latched ? max5925c 3300 autoretry ? max5925d 3300 autoretry ? max5926 0 or 3300 (selectable) latched or autoretry (selectable) ??
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor 20 ______________________________________________________________________________________ 1 2 3 4 5 10 9 8 7 6 cb sense out gate pgood (pgood) en sc_det v cc max5924 max5925 max top view slew ( ) for the max5924a, max5924c, max5925a, and max5925c. gnd 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 v cc cb sense out gate slew n.c. n.c. tc qsop-ep sc_det en1 en2 pgood gnd pgood latch max5926 pin configurations n max5924 max5926 gnd v cc removable card 2.25v to 13.2v backplane cb sense gate gnd v s 1v to v cc v cc out r cb r sense v out see figure 2 for a detailed typical operating circuit with r sense . typical operation with r sense typical operating circuits (continued) chip information transistor count: 3751 process: bicmos
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor ______________________________________________________________________________________ 21 package information (the package drawing(s) in this data sheet may not reflect the most current specifications. for the latest package outline info rmation, go to www.maxim-ic.com/packages .) 10lumax.eps package outline, 10l umax/usop 1 1 21-0061 rev. document control no. approval proprietary information title: top view front view 1 0.498 ref 0.0196 ref s 6 side view bottom view 0 0 6 0.037 ref 0.0078 max 0.006 0.043 0.118 0.120 0.199 0.0275 0.118 0.0106 0.120 0.0197 bsc inches 1 10 l1 0.0035 0.007 e c b 0.187 0.0157 0.114 h l e2 dim 0.116 0.114 0.116 0.002 d2 e1 a1 d1 min - a 0.940 ref 0.500 bsc 0.090 0.177 4.75 2.89 0.40 0.200 0.270 5.05 0.70 3.00 millimeters 0.05 2.89 2.95 2.95 - min 3.00 3.05 0.15 3.05 max 1.10 10 0.60.1 0.60.1 ? 0.500.1 h 4x s e d2 d1 b a2 a e2 e1 l l1 c gage plane a2 0.030 0.037 0.75 0.95 a1
max5924/max5925/max5926 1v to 13.2v, n-channel hot-swap controllers require no sense resistor maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a maxim product. no circu it patent licenses are implied. maxim reserves the right to change the circuitry and specifications without notice at any time. 22 ____________________maxim integrated products, 120 san gabriel drive, sunnyvale, ca 94086 408-737-7600 2006 maxim integrated products is a registered trademark of maxim integrated products, inc. maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a maxim product. no circu it patent licenses are implied. maxim reserves the right to change the circuitry and specifications without notice at any time. 22 ____________________maxim integrated products, 120 san gabriel drive, sunnyvale, ca 94086 408-737-7600 2006 maxim integrated products is a registered trademark of maxim integrated products, inc. package information (continued) (the package drawing(s) in this data sheet may not reflect the most current specifications. for the latest package outline info rmation, go to www.maxim-ic.com/packages .) qsop,exp. pads.eps c 1 1 21-0112 package outline, 16l qsop, .150" exposed pad revision history pages changed at rev 1: 1?3, 15?8, title change?ll pages. pages changed at rev 2: 1?, 10?2


▲Up To Search▲   

 
Price & Availability of MAX5924DEUB

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X